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IRF7416QPbF
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
V GS = 0V, I D = -250 μ A
Δ V (BR)DSS / Δ T J Breakdown Voltage Temp. Coefficient
––– -0.024 –––
V/°C Reference to 25°C, I D = -1mA
R DS(on)
V GS(th)
gfs
I DSS
I GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
-1.0
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.020
0.035
-2.04
–––
-1.0
-25
-100
100
Ω
V
S
μ A
nA
V GS = -10V, I D = -5.6A
V GS = -4.5V, I D = -2.8A
V DS = V GS , I D = -250 μ A
V DS = -10V, I D = -2.8A
V DS = -24V, V GS = 0V
V DS = -24V, V GS = 0V, T J = 125°C
V GS = -20V
V GS = 20V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q g
Total Gate Charge
–––
61
92
I D = -5.6A
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
22
18
49
59
60
1700
890
410
12
32
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
V DS = -24V
V GS = -10V, See Fig. 6 & 9
V DD = -15V
I D = -5.6A
R G = 6.2 Ω
R D = 2.7 Ω, See Fig. 10
V GS = 0V
V DS = -25V
? = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
-3.1
-45
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
56
99
-1.0
85
150
V
ns
nC
T J = 25°C, I S = -5.6A, V GS = 0V
T J = 25°C,I F = -5.6A
di/dt = 100A/ μ s
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 25mH
R G = 25 Ω , I AS = -5.6A. (See Figure 12)
2
? I SD ≤ -5.6A, di/dt ≤ 100A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 10sec.
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